| Autor: |
Hsu, T.H., Fang, Y.K., Yaung, D.N., Wuu, S.G., Chien, H.C., Wang, C.S., Lin, J.S., Tseng, C.H., Chen, S.F., Lin, C.S., Lin, C.Y. |
| Předmět: |
|
| Zdroj: |
IEEE Electron Device Letters; Jun2004, Vol. 25 Issue 6, p427-429, 3p, 4 Graphs |
| Abstrakt: |
An effective method to evaluate the hot-carrier-induced pixel performance degradation of 0.18-µm CMOS active pixel sensor has been reported. The hot carriers generated at the source follower transistor and absorbed by the nearby photodiode will cause the pixel performance degradation such as increase of dark signal and decrease of operation range. Based on the detailed measurements through overall operation conditions, a simple method has been proposed to evaluate the degradation induced by the hot carriers and, thus, provides a design guide to predict pixel performance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
