| Autor: |
Rejhon, M., Franc, J., Dědič, V., Pekárek, J., Roy, U. N., Grill, R., James, R. B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2018, Vol. 124 Issue 23, pN.PAG-N.PAG, 6p, 2 Diagrams, 1 Chart, 4 Graphs |
| Abstrakt: |
We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe (CZTS) radiation detectors by comparing experimental data with numerical simulations based on the simultaneous solution of drift-diffusion and Poisson equations, including the Shockley-Read-Hall model of the carrier trapping. We determined the Schottky barrier heights and the Fermi level position from I-V measurements. We measured the time evolution of the electric field and the electrical current after the application of a voltage bias. We observed that the electrical properties of CZTS are fundamentally governed by two deep levels close to the mid-bandgap—one recombination and one hole trap. We show that the hole trap indirectly increases the mobility-lifetime product of electrons. We conclude that the structure of deep levels in CZTS is favorable for high electrical charge transport. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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