| Autor: |
Ravikumar, K. G., Aizawa, T., Shimomura, K., Kikugawa, T., Asada, M., Aral, S., Suematsu, Y., Yamauchi, R. |
| Předmět: |
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| Zdroj: |
Microwave & Optical Technology Letters; 2/20/94, Vol. 7 Issue 3, p89-94, 6p, 3 Diagrams, 10 Graphs |
| Abstrakt: |
In this article we report theoretical as well as experimental studies of the electric-field-induced refractive index change in InGaAs/InP quantum-well structures, viz., quantum-film, quantum-wire, and quantum-box structures. The refractive index change, easily measured using a Mach-Zehnder interferometer setup, was around 1%, 4%, and 7% in quantum film, quantum wire, and quantum box, respectively, in the longer-wavelength region corresponding to the positive refractive index change peak. Moreover, we will discuss that the refractive index change dependency on the polarization of incident light in a quantum film can be controlled by introducing, suitable tensile strain in it. It was found that for a well width of 11 nm. 0.3% tensile strain should be induced to obtain polarization-independent refractive index change. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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