| Autor: |
Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Sheng-Wen Xie, Jin-Ming Shang, Yun-Hao Zhao, Chen-Yuan Cai, Ren-Chao Che, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu |
| Předmět: |
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| Zdroj: |
Chinese Physics B; Dec2018, Vol. 27 Issue 12, p1-1, 1p |
| Abstrakt: |
We compare the effect of InGaAs/GaAs strained-layer superlattice (SLS) with that of GaAs thick buffer layer (TBL) serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots (QDs) on Si substrate is caused by the quality of capping In0.15Ga0.85As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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