| Autor: |
Galiy, P. V., Mazur, P., Ciszewski, A., Nenchuk, T. M., Yarovets', I. R., Dveriy, O. R. |
| Předmět: |
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| Zdroj: |
Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii; Oct2018, Vol. 40 Issue 10, p1349-1358, 10p |
| Abstrakt: |
Self-assembled indium deposition-induced nanostructures are obtained on the UHV cleaved (100) surface of In4Se3 layered semiconductor crystals. The small indium-deposition rates and short deposition times are chosen to study growth orientation and origin of nanostructures observed by scanning tunnelling microscopy (STM) on the (100) surface of In4Se3 after indium deposition. The shape of these nanostructures strictly depends on the overstoichiometric indium concentration level in the melt during the crystal growth varying from 3D islands for low concentration to elongated shapes, i.e., nanowires, in the case of highly-indium-doped crystals. High-resolution STM study determines the self-assembled quasi-periodical nanowires' growth along c-axis of (100)In4Se3 substrate. The spatially resolved scanning tunnelling spectroscopy (STS) study revealed metallic nature of the surface of nanostructures grown on the semiconductor substrate. The growth mechanism of indium-deposited nanostructures is considered to be powered by anisotropic striated lattice structure of In4Se3 (100) surface with indium nuclei in concentration depending on the degree of overstoichiometric crystalgrowth indium subsequently intercalated into the interlayer gap. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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