| Autor: |
Garcia, C., Pradhan, N. R., Rhodes, D., Balicas, L., McGill, S. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2018, Vol. 124 Issue 20, pN.PAG-N.PAG, 6p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Two-dimensional layered transition metal dichalcogenides have shown much promise due to their remarkable electro-optical properties and potential use as photodetectors. We observed photogating in our few-layered (3–4 layers) ReS 2 field-effect transistors (FETs) in which varying the incident optical power shifted the FETs' threshold voltage. The photogating effect produced a significant gain in the electrical response of the FETs to incident light as measured by the responsivity (R) and external quantum efficiency (EQE). We obtained a maximum R of 45 A/W corresponding to an EQE of ∼ 10 500% in a four-terminal measurement of the photoconductivity in the ON-state. We attribute both the photogating and the observed gain to the influence of charge traps. An estimate of the device gain based on our observations is calculated to be 5 × 10 4. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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