SiC MOSFET 短路特性.

Autor: 秦海鸿, 徐克峰, 王丹, 董耀文, 赵朝会
Zdroj: Journal of Nanjing University of Aeronautics & Astronautics / Nanjing Hangkong Hangtian Daxue Xuebao; Jun2018, Vol. 50 Issue 3, p348-354, 7p
Databáze: Complementary Index