| Autor: |
Bincheng Li, Shaughnessy, Derrick, Mandelis, Andreas, Batista, Jerias, Garcia, Jose |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/15/2004, Vol. 95 Issue 12, p7832-7840, 9p, 1 Diagram, 1 Chart, 6 Graphs |
| Abstrakt: |
A three-dimensional three-layer model is presented for the quantitative understanding of the infrared photocarrier radiometry (PCR) response of ion-implanted semiconductors, specifically Si. In addition to the implanted layer and intact substrate normally assumed in all existing two-layer theoretical models to describe the photothermal response of ion-implanted semiconductors, a surface layer is considered in this three-layer model to represent a thin, less severally damaged region close to the surface. The effects on the PCR signal of several structural, transport, and optical properties of ion-implanted silicon wafers affected significantly by the ion implantation process (minority carrier lifetime, diffusion coefficient, optical absorption coefficient, thickness of the implanted layer, and front surface recombination velocity) are discussed. The dependence of the PCR signal on the ion implantation dose is theoretically calculated and compared to experimental results. Good agreement between experimental data and theoretical calculations is obtained. Both theoretical and experimental results show the PCR dependence on dose can be separated into four regions with the transition across each region defined by the implantation-induced electrical and optical degrees of damage, respectively, as the electrical and optical damage occurs at different dose ranges. It is also shown that the PCR amplitude decreases monotonically with increasing implantation dose. This monotonic dependence provides the potential of the PCR technique for industrial applications in semiconductor metrology. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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