| Autor: |
Bilanych, V. V., Bendak, A. V., Skubenych, K. V., Pogodin, A. I., Bilanych, V. S., Studenyak, I. P. |
| Předmět: |
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| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2018, Vol. 21 Issue 3, p273-276, 4p |
| Abstrakt: |
(Cu1-xAgx)7GeS5I mixed crystals were grown using the Bridgman-Stockbarger method. The hardness dependences on the indentation depth profiles in (Cu1-xAgx)7GeS5I mixed crystals were investigated. The measurements of mechanical parameters were performed at the room temperature by using the micro-indentation method. Variations of the hardness of (Cu1-xAgx)7GeS5I mixed crystals were interpreted in the framework of the deformation gradient model. The influence of cation Cu-Ag substitution on mechanical parameters of (Cu1-xAgx)7GeS5I mixed crystals was studied. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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