Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation.

Autor:	Venediktov, M. M., Tarasova, E. A., Bozhen’kina, A. D., Obolensky, S. V., Elesin, V. V., Chukov, G. V., Metelkin, I. O., Krevskiy, M. A., Dukov, D. I., Fefelov, A. G.
Předmět:	NON-equilibrium reactions SEMICONDUCTORS MICROWAVE transistors IRRADIATION NEUTRONS
Zdroj:	Semiconductors; Dec2018, Vol. 52 Issue 12, p1518-1524, 7p
Abstrakt:	Abstract: The influence of nonequilibrium processes in semiconductor structures under the effect of radiation on the characteristics of structures and microwave transistors based on them is analyzed. Special attention is paid to the comparison of pilot (experimental) and series-produced structures and transistors based on them before and after γ-neutron irradiation. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Plný text ve formátu HTML
Nepřihlášeným uživatelům se plný text nezobrazuje	K zobrazení výsledku je třeba se přihlásit.