| Autor: |
Weimann, Nils G., Johansen, Tom K., Stoppel, Dimitri, Matalla, Matthias, Brahem, Mohamed, Nosaeva, Ksenia, Boppel, Sebastian, Volkmer, Nicole, Ostermay, Ina, Krozer, Viktor, Ostinelli, Olivier, Bolognesi, Colombo R. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Sep2018, Vol. 65 Issue 9, p3704-3710, 7p |
| Abstrakt: |
We report on the realization mymargin of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4- $\mu \text{m}$ -wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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