| Autor: |
Zhang, Jialin, He, Liang, Li, Liuan, Ni, Yiqiang, Que, Taotao, Liu, Zhenxin, Wang, Wenjing, Zheng, Jiexin, Huang, Yanfen, Chen, Jia, Gu, Xin, Zhao, Yawen, He, Lei, Wu, Zhisheng, Liu, Yang |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Nov2018, Vol. 39 Issue 11, p1720-1723, 4p |
| Abstrakt: |
In this letter, partial recessed-gate AlAl2O3/AlGaN/GaN MISFET is experimentally demonstrated based on selective-area growth. The device features different contents of Al in the AlGaN barriers that were grown in the recessed and accessed regions that contributed to a higher $\text{V}_{\textsf {th}}$ and lower ON-resistance. As a result, it achieves a positive shift in ${V}_{\textsf {th}}$ as compared to the reference (from 1.8 to 2.5 V). Besides, this method accomplished the highest reported peak $\mu _{\textsf {FE}}$ value of 2033 cm2/ $\textsf {V}\cdot \textsf {s}$ and a lower gate channel sheet resistance of $519~\Omega /\Box $ (access region, ${R}_{\textsf {sh}} $ of $418~\Omega /\Box $) owing to reserving damage-free AlGaN/GaN hetero-structure in the recessed-gate. Notably, the formed device also exhibits a low hysteresis, low gate leakage, and a slight current collapse. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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