| Autor: |
Tossoun, Bassem, Zang, Jizhao, Addamane, Sadhvikas J., Balakrishnan, Ganesh, Holmes, Archie L. Holmes, Beling, Andreas |
| Zdroj: |
Journal of Lightwave Technology; 10/15/2018, Vol. 36 Issue 20, p4981-4987, 7p |
| Abstrakt: |
Waveguide-integrated photodiodes with InGaAs/GaAsSb type-II quantum well absorption regions designed to absorb light at 2 $ \mu$ m are presented. A novel dual-integrated waveguide-depletion layer was used to maximize quantum efficiency in photodiodes designed with thin absorbers for high-speed optical response. Low dark currents (1 nA at $-$ 1 V) and an internal responsivity of 0.84 A/W along with a bandwidth above 10 GHz and an open eye diagram at 10 Gb/s have been demonstrated at 2 $ \mu$ m. The high-speed carrier dynamics within InGaAs/GaAsSb type-II quantum wells are explored for the first time and suggest that the transit time of the photodiode is limited by light hole escape times in the quantum wells. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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