| Autor: |
Bhasker, Prashanth, Norman, Justin, Bowers, John, Dagli, Nadir |
| Zdroj: |
Journal of Lightwave Technology; 9/15/2018, Vol. 36 Issue 18, p4205-4210, 6p |
| Abstrakt: |
We report for the first-time electro-optic phase and amplitude modulators in GaAs/AlGaAs epitaxial layers grown on misaligned silicon substrates containing germanium buffer layers. Epilayer has a npin doping profile and is equivalent to a pin diode. The 4-mm long electrode Mach–Zehnder modulators have 7.4- and 3.6-V Vπ under single-arm and push–pull drive conditions corresponding to 1.5 ± 0.1 V-cm modulation efficiency. Data on 7-mm long electrode Fabry–Perot phase modulators indicate 2.3-V Mach–Zehnder modulators are possible. These data also indicate less than 1-dB/cm on-chip propagation loss under 5-V reverse bias. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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