Autor: |
Wei, Zhiqiang, Homma, Kazunari, Katayama, Koji, Kawai, Ken, Fujii, Satoru, Naitoh, Yasuhisa, Shima, Hisashi, Akinaga, Hiroyuki, Ito, Satoru, Yoneda, Shinichi |
Předmět: |
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Zdroj: |
IEEE Transactions on Electron Devices; Nov2018, Vol. 65 Issue 11, p5189-5194, 6p |
Abstrakt: |
A novel hydrogen sensor has been developed by using an optimized 0.18- $\mu \text{m}$ resistive random access memory process with a Pt/Ta2O5/TaOx/TaN stack. This resistive hydrogen sensor (ReHsensor) conforms to the ISO26142 standard in which it exhibits exceptional sensing capabilities, including a short response time (about 20 s for 1 vol.% hydrogen gas), high sensitivity, wide hydrogen concentration detection range (up to 4 vol.%) in air and N2 ambient, high gas selectivity (no reaction with CH4, CO, CH3OH, or CH3COCH3) and is immune to poisoning by SO2 and hexamethyl disiloxane. As it does not require a heater, the power consumption of the ReHsensor is very low, at 0.4 mW. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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