| Autor: |
Zasavitskii, I. I., Kovbasa, N. Yu., Raspopov, N. A., Lobintsov, A. V., Kurnyavko, Yu. V., Gorlachuk, P. V., Revin, D. G., Krysa, A. B. |
| Předmět: |
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| Zdroj: |
KnE Engineering; 10/8/2018, p236-243, 8p |
| Abstrakt: |
A quantum cascade laser based on a strain-compensated Ga0.4In0.6As/Al0.58In0.42As heteropair is developed, which operates in a pulse mode in the wavelength range of 5.5-5.6 µm at a temperature of up to 350 K. Such characteristics are obtained due to increased quantum well depth and a two-phonon depopulation mechanism for the lower laser level. The laser epitaxial heterostructure was grown by the MOVPE method. Investigation by the high-resolution X-ray diffraction technique confirmed a high quality of the heterostructure. The threshold current density is 1.6 kA/cm² at 300 K. The characteristic temperature is T0 = 161 K for the temperature range of 200-350 K. For a laser of size 20 µm × 3 mm with cleaved mirrors, the maximum pulse power is 1.1 W at 80 K and 130 mW at 300 K. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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