The Technique for I-V Characteristic Measurements of MOSFETs from Output Stage of MOS ICs.

Autor:	Bakerenkov, A. S., Glukhov, N. S., Shaltaeva, Yu. R., Rodin, A. S., Felitsyn, V. A.
Předmět:	METAL oxide semiconductor field-effect transistors CHARACTERISTIC functions FIELD-effect transistors METAL oxide semiconductors
Zdroj:	KnE Engineering; 10/8/2018, p74-78, 5p
Abstrakt:	Experimental technique for measurements of I-V characteristics of MOSFETs from output stage of MOS ICs is developed and demonstrated using Schmitt trigger array 1594TL2T. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu