| Autor: |
Tu, Y., Shimizu, Y., Kunimune, Y., Shimada, Y., Katayama, T., Ide, T., Inoue, M., Yano, F., Inoue, K., Nagai, Y. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2018, Vol. 124 Issue 15, pN.PAG-N.PAG, 8p, 2 Diagrams, 1 Chart, 6 Graphs |
| Abstrakt: |
Atom probe tomography and secondary ion mass spectrometry were used to investigate the effects of carbon (C) co-implantation and subsequent annealing at 600 to 1200 °C on the behavior of implanted boron (B) atoms in silicon. When B alone was implanted, annealing at 600 to 800 °C caused it to form clusters in the peak region (1020 cm−3) of the concentration profile, and diffusion only occurred in the low-concentration tail region (<1018 cm−3), which is thought to be the well-known transient enhanced diffusion. However, when co-implantation with C was performed, this diffusion was almost completely suppressed in the same annealing temperature range. In the absence of C implantation, annealing at 1000 °C caused B clusters to begin to dissolve and B to diffuse out of the peak concentration region. However, this diffusion was also suppressed by C implantation because C atoms trapped B atoms in the kink region found at the B concentration level of 2 × 1019 cm−3. At 1200 °C, B clusters were totally dissolved and a strong B diffusion occurred. In contrast to lower annealing temperatures, this diffusion was actually enhanced by C implantation. It is believed that Si interstitials play an important role in the interaction between B and C. This kind of comprehensive investigation yields important information for optimizing ion implantation and annealing processes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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