Erratum: "Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors" [J. Appl. Phys. 122, 095302 (2017)].

Autor: Ghose, Susmita, Rahman, Shafiqur, Hong, Liang, Klie, Robert, Rojas-Ramirez, Juan Salvador, Droopad, Ravi, Jin, Hanbyul, Park, Kibog
Předmět:
Zdroj: Journal of Applied Physics; 2018, Vol. 124 Issue 13, pN.PAG-N.PAG, 1p
Abstrakt: An erratum is presented to the article "Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors" which appeared in an earlier issue on October 3, 2018.
Databáze: Complementary Index