Erratum: "Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors" [J. Appl. Phys. 122, 095302 (2017)].
Autor: | Ghose, Susmita, Rahman, Shafiqur, Hong, Liang, Klie, Robert, Rojas-Ramirez, Juan Salvador, Droopad, Ravi, Jin, Hanbyul, Park, Kibog |
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Zdroj: | Journal of Applied Physics; 2018, Vol. 124 Issue 13, pN.PAG-N.PAG, 1p |
Abstrakt: | An erratum is presented to the article "Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors" which appeared in an earlier issue on October 3, 2018. |
Databáze: | Complementary Index |
Externí odkaz: |