| Autor: |
Simpkins, B. S., Yu, E. T., Chowdhury, U., Wong, M. M., Zhu, T. G., Yoo, D. W., Dupuis, R. D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/2004, Vol. 95 Issue 11, p6225-6231, 7p, 3 Black and White Photographs, 1 Diagram, 2 Graphs |
| Abstrakt: |
Conductive atomic force microscopy (C-AFM) and surface photovoltage (SPV) microscopy were used to investigate local electronic structure in p-type GaN. C-AFM imaging revealed locally reduced forward- and reverse-bias conductivity near threading dislocations. In addition, regions near threading dislocations demonstrated significantly enhanced surface photovoltage response when compared to regions away from dislocations. Analytical treatment of the surface photovoltage as a function of pertinent material properties indicated that reduced background dopant concentration is the most likely cause for the increased SPV. Both reduced conductivity and enhanced surface photovoltage are shown to be consistent with Mg segregation to dislocation cores that results in regions of locally decreased electrically active Mg concentration surrounding the dislocations. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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