| Autor: |
Ascazubi, Ricardo, Wilke, Ingrid, Denniston, Kyle, Hai Lu, Schaff, William J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/7/2004, Vol. 84 Issue 23, p4810-4812, 3p, 1 Diagram, 1 Chart, 3 Graphs |
| Abstrakt: |
We report on optically excited terahertz (THz) emission by indium nitride (InN) thin films. We have used 70 fs titanium–sapphire laser pulses with wavelengths at 800 nm to generate THz-radiation pulses. The InN thin films are deposited on sapphire substrates with GaN buffer layer by molecular-beam epitaxy. The THz-radiation emitted from the InN surface is significantly stronger than that of the GaN/InN interface. The origin of the THz emission are transient photocarrier currents. These results are in agreement with recent experimental results of InN which show that this material is a small band-gap semiconductor. The magnitude of the THz emission from the InN is strong compared to THz emission from previously investigated semiconductors. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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