| Autor: |
Chiu-Ping Cheng, Wan-Sin Chen, Yi-Ting Cheng, Hsien-Wen Wan, Keng-Yung Lin, Lawrence Boyu Young, Cheng-Yeh Yang, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong |
| Předmět: |
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| Zdroj: |
Journal of Physics D: Applied Physics; 10/10/2018, Vol. 51 Issue 40, p1-1, 1p |
| Abstrakt: |
Using in situ synchrotron-radiation photoelectron spectroscopy, the band offsets and the surface dipole potential energy for cycle-by-cycle atomic layer deposited (ALD) Y2O3 on p-type GaAs(0 0 1)-4 × 6 were studied. We have characterized the electronic property for laminar films. The valence- and conduction-band offsets and interfacial dipole potential energy are approximately 1.75, 2.4, and 0.46 eV, respectively. The dipole direction points outward, showing that Y(+) is located at the topmost layer and the O(−) ions participate in the bonding with the GaAs surface atoms. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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