| Autor: |
Raghuveer, M. S., Ganesan, P. G., D'Arcy-Gall, J., Ramanath, G., Marshall, M., Petrov, I. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/31/2004, Vol. 84 Issue 22, p4484-4486, 3p, 4 Diagrams, 1 Graph |
| Abstrakt: |
We demonstrate the use of 10 and 30 keV focused beams of Ga+ ions to thin, slice, weld, and alter the structure and composition of multiwalled carbon nanotubes at precise locations along the nanotube axis. This strategy of harnessing ion-beam-induced defect generation and doping could be attractive for modulating chemical and electrical properties along the nanotube length, and fabricate nanotube heterostructures and networks for device applications. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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