| Autor: |
Dolgopolov, V. T., Melnikov, M. Yu., Shashkin, A. A., Huang, S.-H., Liu, C. W., Kravchenko, S. V. |
| Předmět: |
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| Zdroj: |
JETP Letters; Jun2018, Vol. 107 Issue 12, p794-797, 4p |
| Abstrakt: |
We have experimentally studied the fractional quantum Hall effect in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers p = 1, 2, 3, and 4. Minima with p = 3 disappear in magnetic fields below 7 T, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors ν = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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