| Autor: |
Caron, P., Inguimbert, C., Artola, L., Chatry, N., Sukhaseum, N., Ecoffet, R., Bezerra, F. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Aug2018, Vol. 65 Issue 8, p1759-1767, 9p |
| Abstrakt: |
With the increase of sensitivity of devices to single-event upsets (SEUs), the possibility to trigger an upset with incident electrons has been recently raised. All the mechanisms susceptible to trigger the SEUs are investigated in detail. New measurements performed on the field programmable gate array static random access memory based from Xilinx Spartan 6 at 1 MeV seem to confirm two SEU regions with the transition located around 10 MeV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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