A resistive switching memory device with a negative differential resistance at room temperature.

Autor: Kadhim, Mayameen S., Yang, Feng, Sun, Bai, Wang, Yushu, Guo, Tao, Jia, Yongfang, Yuan, Ling, Yu, Yanmei, Zhao, Yong
Předmět:
Zdroj: Applied Physics Letters; 7/30/2018, Vol. 113 Issue 5, pN.PAG-N.PAG, 5p, 2 Diagrams, 1 Chart, 3 Graphs
Abstrakt: In this study, large-area ZnO nanorod arrays covering a Zn foil substrate were produced by a low-cost and low temperature approach. In this approach, oxidation of zinc metal was achieved in a formamide/water mixture. Taking advantage of the product, a sandwiched structure, Ag/ZnO/Zn, was fabricated in which Ag acts as the top electrode, ZnO as the active layer and Zn foil as the bottom electrode. Resistive switching memory behavior (with an HRS/LRS resistance ratio of ∼10) along with a negative differential resistance effect (the largest slope being −3.85) was synchronously observed for this device at room temperature. This device opens up possibilities for multifunctional components in future electronic applications. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index