| Autor: |
Song, Seung-Hyun, Kim, Min-Won, Yoo, Sang-Dong, Shim, Tae-Hun, Park, Jea-Gun |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 7/30/2018, Vol. 113 Issue 5, pN.PAG-N.PAG, 5p, 1 Diagram, 3 Graphs |
| Abstrakt: |
We proposed a two-terminal-electrode vertical thyristor and investigated its suitability as a cross-point memory cell without a selector from the viewpoints of p+- and n+-base region width and a vertically stacked doped-epitaxial-Si layer structure such as p++-emitter/n+-base/p+-base/n++-emitter or n++-emitter/p+-base/n+-base/p++-emitter. The proper p+- and n+-base-region width (i.e., 160 nm) and p++-emitter/n+-base/p+-base/n++-emitter layer structure could enable the development of a cross-point memory cell using the half bias concept by preventing misfit dislocations at the junctions between the n++-emitter and p+-base or n+-base and p++-emitter. It was also found that generation of the misfit dislocations originating from B or P atom segregation at junctions during doped-Si epitaxial-layer growth enhanced the strain at the junctions. The misfit dislocations at the junctions were produced when the strain at the junctions was greater than ∼4 × 10−4. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
