| Autor: |
Mitev, Georgi Mitev, Sarieva-Jordanova, Snejana, Mitev, Mityo Georgiev |
| Předmět: |
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| Zdroj: |
Annual Journal of Electronics; 2015, Vol. 9, p250-253, 4p |
| Abstrakt: |
This paper proposes a novel system for RADFET read-out, which allows measuring its threhold voltage at varied current levels. The system has the distinctive ability to change the direction of the readout current. That way the characteristics of the reverse diode between the drain and the silicon base can be measured and the FET temperature can be determined. Te paper also presents experimental data from pMOSFET ZVP4424 dynamic characteristics measurements. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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