| Autor: |
Masakazu Arai, Kakeru Takahashi, Yuya Yamagata, Yuki Inoue, Ryosuke Wakaki, Koji Maeda |
| Zdroj: |
Japanese Journal of Applied Physics; 8/2/2018, Vol. 57 Issue 8S2, p1-1, 1p |
| Abstrakt: |
We investigated the gas flow sequence to realize a short-period and lattice-matched InAs/GaAsSb superlattice on an InAs substrate by metalorganic vapor phase epitaxy (MOVPE) growth for applications in mid-infrared photonic devices. The arsenic composition of GaAsSb for lattice matching was adjusted by adding AsH3 flow to residual arsenic incorporation. The growth conditions for lattice-matched superlattices at a period of 5 nm were found. The superlattices with period thicknesses of 1 to 9 nm were successfully confirmed by the photoluminescence (PL) peak in the range from 2.4 to 5 µm depending on layer thickness at 20 K. The emission wavelength can be controlled by changing the layer thickness of superlattices. The results led to the improvement of InAs/GaAsSb type II superlattice growth. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
