| Autor: |
Dai, Min, Zhao, Qiang, Hu, Dawei, Schepis, Dominic, Di, Ming |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 7/16/2018, Vol. 113 Issue 3, pN.PAG-N.PAG, 4p, 1 Chart, 3 Graphs |
| Abstrakt: |
A highly precise band gap measurement based on deep UV spectroscopic ellipsometry along with Bruggeman effective model approximation was developed for high-k/metal gate CMOS with ultrathin EOT (<1.5 nm). By applying and comparing the measurement for HfO2 on SiO2 and SiON interfacial layers with different thicknesses, N%, and annealing conditions, two new sub band gap states corresponding to nitrogen in the film are observed. Together with X-ray photoelectron spectroscopy and electrical measurements, it is found that the band gap energies can be correlated to N% and the leakage current of the high-k films by linear regression (R2 = 0.95). This indicates that the method is capable of quantifying physical and electrical properties of high-k dielectrics, and therefore a time consuming physical analysis or expensive electrical test on fully built devices for gate dielectrics can be avoided. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
