| Autor: |
Ben Du, Yi Gu, Yong-Gang Zhang, Xing-You Chen, Ying-Jie Ma, Yan-Hui Shi, Jian Zhang |
| Předmět: |
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| Zdroj: |
Chinese Physics Letters; Jun2018, Vol. 35 Issue 7, p1-1, 1p |
| Abstrakt: |
We demonstrate a wavelength extended InGaAsBi short-wave infrared photodetector on an InP substrate with the 50% cutoff wavelength up to 2.63 μm at room temperature. The moderate growth temperature is applied to balance the Bi incorporation and material quality. Photoluminescence and x-ray diffraction reciprocal space mapping measurements reveal the contents of bismuth and indium in InGaAsBi to be about 2.7% and 76%, respectively. The InGaAsBi detector shows the temperature-insensitive cutoff wavelength with a low coefficient of about 0.96 nm/K. The demonstration indicates the InP-based InGaAsBi material is a promising candidate for wavelength extended short-wave infrared detectors working. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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