| Autor: |
Ji, Dong, Li, Wenwen, Agarwal, Anchal, Chan, Silvia H., Haller, Jeffrey, Bisi, Davide, Labrecque, Michelle, Gupta, Chirag, Cruse, Bill, Lal, Rakesh, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Jul2018, Vol. 39 Issue 7, p1030-1033, 4p |
| Abstrakt: |
This letter reports on the dynamic $R_{\text{ON}}$ performance of large-area GaN vertical trench MOSFETs (OG-FETs) fabricated on bulk GaN substrates. OG-FETs demonstrated excellent DC performance with a breakdown voltage of 900 V and a $R_{\text{ON}}$ of 4.1 $\Omega$ (8.2 $\text{m}\Omega \cdot \text {cm}^{2}$ ). However, damage to the trench sidewalls caused by RIE dry etching led to poor dynamic $R_{\text{ON}}$ performance. An improved dynamic $R_{\text{ON}}$ performance was achieved by following the RIE dry etch with a TMAH wet etch. With this process combination, the dynamic $R_{\text{ON}}$ was reduced by more than 10 times compared with the dynamic $R_{\text{ON}}$ in devices fabricated by dry etch only. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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