| Autor: |
Kim, Dong-Hwan, Park, Hongjong, Eom, Su-Keun, Jeong, Jun-Seok, Cha, Ho-Young, Seo, Kwang-Seok |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; Jul2018, Vol. 39 Issue 7, p995-998, 4p |
| Abstrakt: |
This letter reports the excellent radio frequency output characteristics of AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuits (MMICs) operating at the Ka-band, employing a recessed metal–insulator–semiconductor (MIS) structure with SiNx/HfON dual dielectric layers. The fabricated 0.15- $\mu \text{m}$ AlGaN/GaN-on-Si high electron-mobility transistor (HEMT) exhibited a low OFF-state current and reduced current collapse in comparison with the conventional Schottky gate HEMT; therefore, an enhanced output power of the PA MMIC is achieved. The fabricated two-stage PA MMIC exhibited a continuous-wave output power of >29 dBm with a power-added efficiency (PAE) of 14.5% at the drain voltage of 20 V, at 26.5 GHz. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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