Autor: |
Klappenberger, F., Renk, K.F., Renk, P., Rieder, B., Koshurinov, Yu.I., Pavelev, D.G., Ustinov, V., Zhukov, A., Maleev, N., Vasilyev, A. |
Předmět: |
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Zdroj: |
Applied Physics Letters; 5/10/2004, Vol. 84 Issue 19, p3924-3926, 3p, 4 Graphs |
Abstrakt: |
We report on a semiconductor-superlattice frequency multiplier for the generation of submillimeter waves. A monochromatic microwave-pump field (frequency near 100 GHz) periodically excited a superlattice into states of negative differential conductivity giving rise to space-charge domain creation and annihilation joint with a nonsinusoidal high-frequency current and radiation at harmonics of the pump field. A highly doped GaAs/AlAs superlattice allowed the conversion of pump to third-harmonic radiation at 300 GHz with an efficiency of about 1% (power∼30 µW). [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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