| Autor: |
Arulanantham, A. M. S., Valanarasu, S., Kathalingam, A., Jeyadheepan, K. |
| Předmět: |
|
| Zdroj: |
Journal of Materials Science: Materials in Electronics; Jul2018, Vol. 29 Issue 13, p11358-11366, 9p |
| Abstrakt: |
Tin disulfide (SnS2) thin films deposited using by nebulizer spray pyrolysis method (NSP) with different carrier gas pressure (as 0.078, 0.068 and 0.058 Pa) at 325 °C is reported. The prepared films were characterized by X-ray diffraction, Raman spectrum, scanning electron microscopy, atomic force microscopy, EDAX, UV-Vis spectroscopy and photoluminescence analysis. Electrical properties study done by Hall effect measurements for the films deposited at various carrier gas pressures is also reported. Structural and surface morphological analyses showed highly crystalline pure phase of SnS2 thin films with relatively low surface roughness. Hall measurements revealed that the conductivity and mobility are in the range from 0.00007 to 15 (Ω−1 cm−1) and 16 to 37 (cm2 Vs−1), respectively. These results suggest that, using the optimized carrier gas pressure and other nebulizer spray parameters such as substrate temperature and nebulizer nozzle to substrate distance, a device quality conformal deposition of tin disulfide thin film which is essential for the thin film solar cell structures can be prepared using NSP method. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink