Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz rf-Biased Inductively Coupled Plasma.

Autor:	Han, Chuankun, Yang, Yiyong, Liu, Weifeng, Lu, Yijia, Cheng, Jia
Předmět:	SPUTTER etching INDUCTIVELY coupled plasma spectrometry ION energy SEMICONDUCTOR manufacturing ANISOTROPY
Zdroj:	SPIN (2010-3247); Jun2018, Vol. 8 Issue 2, pN.PAG-N.PAG, 10p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu