| Autor: |
Godoy, A., Gamiz, F., Palma, A., Jiménez-Tejada, J. A., Banqueri, J., López-Villanueva, J. A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/1997, Vol. 82 Issue 9, p4621, 8p, 1 Diagram, 12 Graphs |
| Abstrakt: |
Examines the amplitude of random telegraph signals (RTS) in an n-channel metal-oxide-semiconductor field effect transistor. Influence of trap depth in the oxide on the RTS amplitude; Contributions of the mobility and carrier fluctuations on the amplitude of discrete current switching; Explanation of the behavior of the normalized current fluctuations. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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