| Autor: |
Zhang, Yichuan, Wei, Ke, Huang, Sen, Wang, Xinhua, Zheng, Yingkui, Liu, Guoguo, Chen, Xiaojuan, Li, Yankui, Liu, Xinyu |
| Předmět: |
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| Zdroj: |
IEEE Electron Device Letters; May2018, Vol. 39 Issue 5, p727-730, 4p |
| Abstrakt: |
In this letter, a high-temperature (HT) gate recess technique is implemented into the fabrication of high-performance millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). By virtue of the low damage feature of the HT recess, a high extrinsic transconductance of 422 mS/mm, a three-terminal breakdown voltage of 134 V with a source–drain separation of 2.4 $\mu \text{m}$ , and a remarkable low Schottky gate leakage current of $1.6\times 10^{-6}$ A/mm at ${V}_{\textsf {GS}} = -\textsf {60}$ V are achieved, which is at least two orders of magnitude lower than the HEMTs with gate recessed at room temperature. By employing a 0.2- $\mu \text{m}$ T-shaped gate technology, a current-gain cutoff frequency ${f}_{T}$ of 81 GHz and a unit-power-gain frequency ${f}_{\textsf {MAX}}$ of 194 GHz are realized. The current collapse in the HT-recessed AlGaN/GaN HEMTs is significantly suppressed, contributing to a record high power-added-efficiency of 42.8%, as well as high output power density of 5.1 W/mm at 35 GHz in a continuous-wave mode. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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