| Autor: |
KuppiReddy, Vasudeva Reddy, Herolli, Prashantha Kumar, Baghini, Maryam Shojaei |
| Předmět: |
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| Zdroj: |
IET Microwaves, Antennas & Propagation (Wiley-Blackwell); 2018, Vol. 12 Issue 7, p1072-1079, 8p |
| Abstrakt: |
A single-to-differential low-noise amplifier (LNA) is proposed for low-power medical devices in the frequency band of 401-406 MHz. The proposed LNA avoids the use of surface acoustic wave (SAW) filter and additional balun in RF receiver front-end. The LNA comprises inductive degeneration common source (IDCS) technique (stage I) and a cascaded common source circuit (stage II). The stage-II is stacked on top of stage-I. The proposed balun LNA incorporates single to differential (SD) conversion for minimum gain and phase error. A compensation bias circuit is proposed to minimise variations in parameters of LNA against process corners, supply voltage and temperature (PVT). An upsurge balun LNA is designed in UMC 0.18-µm CMOS technology, the DC power consumption is 290 µW under a supply voltage of 1 V and the minimum noise figure is 3 dB. The die area of LNA including buffers and bias circuit is 850 µm x 978 µm. The worst-case post layout simulation results show a gain and phase error of 0.8 dB and 10°. The percentage variation of gain and NF against PVT is reduced by 55 and 48%. Furthermore, the balun LNA has out of band rejection at the roll-off rate better than 70 dB/dec. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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