| Autor: |
Kim, Kee-Tae, Ji, Chan-Hyuk, Song, Da-Hee, Kim, Hae-Sung, Oh, Se-Young |
| Předmět: |
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| Zdroj: |
Molecular Crystals & Liquid Crystals; 2018, Vol. 662 Issue 1, p91-95, 5p |
| Abstrakt: |
The photodiode converts incident light into a microcurrent that flows when photons of sufficient energy strike the device under reverse bias. In doing so, a leakage current is caused by the reverse bias. In order to decrease the leakage current, buffer layers are introduced as electron- and hole-blocking materials between the photoactive material and electrode. We fabricated an organic photodiode using Ga-doped NiOx as an electron-blocking layer and investigated the physical effects of Ga doping on the performance of the organic photodiode. Our results showed that this diode exhibited high detectivity of 1.06 × 1012 Jones. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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