| Autor: |
Cho, Yuljae, Ahn, Docheon, Park, Jong Bae, Pak, Sangyeon, Lee, Sanghyo, Jun, Byoung Ok, Hong, John, Lee, Su Yong, Jang, Jae Eun, Hong, Jinpyo, Morris, Stephen M., Sohn, Jung Inn, Cha, Seung Nam, Kim, Jong Min |
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| Zdroj: |
Advanced Electronic Materials; Oct2016, Vol. 2 Issue 10, p1-1, 7p |
| Abstrakt: |
The article focuses on enhanced ferroelectric property of film using room-temperature crystallization for high-performance ferroelectric device applications and ferroelectric field effect transistors (feFET) and mechanical energy harvesting devices. It mentions use of conventional process of thermal annealing (TA), a room temperature annealing method and the phase is depicted by a different molecular structure. It also mentions films were measured and compared using X-Ray Diffraction (XRD). |
| Databáze: |
Complementary Index |
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