Dependence on gate work function of oxide charging, defect generation, and hole currents in ...
| Autor: | DiMaria, D.J. |
|---|---|
| Předmět: | |
| Zdroj: | Journal of Applied Physics; 4/1/1997, Vol. 81 Issue 7, p3220, 7p, 11 Graphs |
| Abstrakt: | Investigates the anode hole generation from metal-oxide-semiconductor structures with gates electrodes involving oxide charge trapping and current sensing techniques. Consequences of experiment; Fowler-Nordheim (FN) tunneling conditions; Capacitance as function of voltage; FN current transients; Stress induced leakage currents; Carrier separation. |
| Databáze: | Complementary Index |
| Externí odkaz: |
|