| Autor: |
Roberts, R.G., Hagston, W.E., Chen, P., Nicholls, J. E., O'Neill, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/1997, Vol. 82 Issue 9, p4378, 6p, 1 Diagram, 1 Chart, 7 Graphs |
| Abstrakt: |
Discusses the effects on the carrier wave function of the introduction of monolayer disorder at the heterojunction interfaces of an undoped superlattice. Existence of a mobility edge in finite two-dimensional structures; Accounting of activated transport; Mechanism of activated carrier transport in doped superlattice systems. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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