| Autor: |
Mikhail Yu. Chernov, Victor A. Solov’ev, Oleg S. Komkov, Dmitriy D. Firsov, Boris Ya. Meltser, Maria A. Yagovkina, Marina V. Baidakova, Petr S. Kop’ev, Sergey V. Ivanov |
| Zdroj: |
Applied Physics Express; Dec2018, Vol. 10 Issue 12, p1-1, 1p |
| Abstrakt: |
In this Letter, we report on the design optimization of metamorphic InSb/InAs/In(Ga,Al)As/GaAs heterostructures with type-II-in-type-I quantum well (QW) active regions, aimed at the enhancement of their room-temperature photoluminescence (PL). The strong influence of the design of the convex-graded metamorphic buffer layer (MBL) and the value of the MBL inverse step in the range from 2 to 14 mol % In on stresses in such heterostructures, as well as their PL intensity, are discussed. The optimized metamorphic In(Sb,As)/In0.63Ga0.37As/In0.75Al0.25As/MBL/GaAs structure with the inverse step of 10 mol % demonstrates 3.2–3.5 µm mid-IR PL intensity quenching from liquid-nitrogen to room temperature by a factor of 12. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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