| Autor: |
Gawri, Isha, Sharma, Mamta, Jindal, Silky, Singh, Harpreet, Tripathi, S. K., Shekhawat, Manoj Singh, Bhardwaj, Sudhir, Suthar, Bhuvneshwer |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2018, Vol. 1953 Issue 1, pN.PAG-N.PAG, 4p |
| Abstrakt: |
The present paper reports the capacitance-voltage characterization of Al/Al2O3/PVA-PbSe MIS diode using chemical bath deposition method. Here anodic alumina layer prepared using electrolytic deposition method on Al substrate is used as insulating material. Using the capacitance-voltage variation at a fixed frequency, the different parameters such as Depletion layer width, Barrier height, Built-in voltage and Carrier concentration has been calculated at room temperature as well as at temperature range from 123 K to 323 K. With the increase in temperature the barrier height and depletion layer width follow a decreasing trend. Therefore, the capacitance-voltage characterization at different temperatures characterization provides strong evidence that the properties of MIS diode are primarily affected by diode parameters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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