Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor.

Autor: Bui, Cong Tinh, Garcia, Christina A. C., Tu, Nguyen Thanh, Tanaka, Masaaki, Hai, Pham Nam
Předmět:
Zdroj: Journal of Applied Physics; 2018, Vol. 123 Issue 17, pN.PAG-N.PAG, 7p, 1 Chart, 6 Graphs
Abstrakt: Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb. [ABSTRACT FROM AUTHOR]
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