BAND OFFSETS IN GaAsSb/GaAs STRAINED-LAYER STRUCTURES FROM HIGH-PRESSURE PHOTOLUMINESCENCE.

Autor:	Prins, A. D., Lambkin, J. D., O'Reilly, E. P., Adams, A. R., Pritchard, R., Truscott, W. S., Singer, K. E.
Předmět:	PHOTOLUMINESCENCE CONDUCTION bands GALLIUM arsenide BAND gaps QUANTUM wells
Zdroj:	Physics of Semiconductors - Proceedings of the 20th International Conference (In 3 Volumes); 1990, p933-936, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu