DIRECT OBSERVATION OF THE TUNABLE OCCUPANCY OF SHALLOW- AND DEEP-DX-RELATED LEVELS AND THE EXISTENCE OF A PARASITIC SHALLOW LEVEL IN n-AlxGa1-xAs LAYERS AS A FUNCTION OF HYDROSTATIC PRESSURE.

Autor:	Lavielle, D., Goutiers, B., Kadri, A., Ranz, E., Omowski, L., Portal, J. C., Grattepain, C., Chand, N., Sallese, J. M., Gibart, P.
Předmět:	HYDROSTATIC pressure PHOTOCONDUCTIVITY ELECTRONIC band structure PHOTOEXCITATION MAGNETIC fields
Zdroj:	Physics of Semiconductors - Proceedings of the 20th International Conference (In 3 Volumes); 1990, p521-524, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu