| Autor: |
Bardhan, Abheek, Mohan, Nagaboopathy, Chandrasekar, Hareesh, Ghosh, Priyadarshini, Sridhara Rao, D. V., Raghavan, Srinivasan |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 10p, 1 Color Photograph, 6 Diagrams, 2 Charts, 6 Graphs |
| Abstrakt: |
The bending and interaction of threading dislocations are essential to reduce their density for applications involving III-nitrides. Bending of dislocation lines also relaxes the compressive growth stress that is essential to prevent cracking on cooling down due to tensile thermal expansion mismatch stress while growing on Si substrates. It is shown in this work that surface roughness plays a key role in dislocation bending. Dislocations only bend and relax compressive stresses when the lines intersect a smooth surface. These films then crack. In rough films, dislocation lines which terminate at the bottom of the valleys remain straight. Compressive stresses are not relaxed and the films are relatively crack-free. The reasons for this difference are discussed in this work along with the implications on simultaneously meeting the requirements of films being smooth, crack free and having low defect density for device applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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