Autor: |
Derbenyova, Natalia V., Burdov, Vladimir A. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 6p, 1 Diagram, 4 Graphs |
Abstrakt: |
Within the framework of the time-dependent density functional theory, the radiative recombination rates have been calculated for small, ∼ 1 nm in diameter, hydrogen-passivated silicon crystallites with a single lithium or phosphorus ion. Sharp increase of the radiative recombination rates with increasing temperature was revealed for the crystallites with the lithium ion. No temperature effect was found for the crystallites with the ion of P. It was also shown that the presence of ionized donors in Si crystallites can substantially accelerate the radiative decay compared to the case of pure crystallites. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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